11290539
Semiconductor Devices and Associated Hardware
TRANSISTOR
11290539
5961 - Semiconductor Devices and Associated Hardware
Ballistic Missile Defense Systems
TRANSISTOR
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Technical Characteristics
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Overall Length
0.250 inches minimum and 0.450 inches maximum
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Mounting Facility Quantity
2
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Mounting Method
unthreaded hole
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Voltage Rating In Volts Per Characteristic
325.0 maximum breakdown voltage,collector-to-base,emitter open and 325.0 maximum breakdown voltage,collector-to-emitter,base open and 7.0 maximum breakdown voltage,emitter-to-base,collector open
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Current Rating Per Characteristic
2.00 amperes maximum collector current,dc
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Power Rating Per Characteristic
50.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius case
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Inclosure Material
metal
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Overall Diameter
0.880 inches maximum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon