2N3120

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N3120

5961-00-432-7735

5961 - Semiconductor Devices and Associated Hardware

Itt Semiconductors Div

TRANSISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Power Rating Per Characteristic

    800.0 milliwatts small-signal input power, common-collector minimum

  • Special Features

    junction pattern arrangement: pnp

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Length

    1.500 inches minimum

  • Overall Length

    0.240 inches minimum and 0.260 inches maximum

  • Current Rating Per Characteristic

    500.00 milliamperes source cutoff current maximum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Overall Diameter

    0.340 inches minimum and 0.370 inches maximum

  • Inclosure Material

    metal

  • Voltage Rating In Volts Per Characteristic

    45.0 maximum breakdown voltage, collector-to-emitter, base open and 45.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum breakdown voltage, emitter-to-base, collector open

  • Specification/Standard Data

    80131-release4604 professional/industrial association specification

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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