174-25566-25
Semiconductor Devices and Associated Hardware
TRANSISTOR
174-25566-25
5961 - Semiconductor Devices and Associated Hardware
Gte Communication Systems Corp
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Internal Junction Configuration
npn
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Current Rating Per Characteristic
0.80 amperes source cutoff current maximum
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Overall Length
0.260 inches maximum
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Length
1.500 inches minimum
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
0.8 watts small-signal input power, common-collector minimum