JAN2N3956

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICES,UNITIZED

JAN2N3956

5961-00-436-1001

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

SEMICONDUCTOR DEVICES,UNITIZED

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Technical Characteristics

  • Mounting Method

    terminal

  • Overall Diameter

    0.230 inches maximum

  • Power Rating Per Characteristic

    250.0 milliwatts maximum total power dissipation all transistor

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-71

  • Terminal Circle Diameter

    0.100 inches nominal

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    6 uninsulated wire lead

  • Component Name And Quantity

    2 transistor

  • Terminal Length

    0.500 inches minimum

  • Overall Length

    0.210 inches maximum

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source all transistor and 50.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source all transistor

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon all transistor

  • Current Rating Per Characteristic

    50.00 milliamperes maximum gate current all transistor

Certified to
AS6081 Methods

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