JAN2N3739
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N3739
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
~1
type data on certain environmental and performa
-
Voltage Rating In Volts Per Characteristic
300.0 maximum collector to emitter voltage/static/base open and 325.0 maximum collector to base voltage/static/emitter open and 6.0 maximum emitter to base voltage, static, collector open
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Semiconductor Material
silicon
-
Mounting Facility Quantity
2
-
Terminal Type And Quantity
2 uninsulated wire lead and 1 case
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
Inclosure Material
metal
-
Power Rating Per Characteristic
20.0 watts small-signal input power, common-collector preset
-
Specification/Standard Data
81349-mil-s-19500/402 government specification
-
Overall Length
1.252 inches maximum
-
Overall Height
0.340 inches maximum
-
Overall Width
0.700 inches maximum
-
Electrode Internally-Electrically Connected To Case
collector
-
Current Rating Per Characteristic
0.50 amperes source cutoff current minimum and 1.00 amperes source cutoff current maximum
-
Test Data Document
81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general