110C174

Technical Characteristics

• Terminal Circle Diameter

  0.100 inches nominal

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  40.0 maximum collector to base voltage, dc and 40.0 maximum collector to emitter voltage, dc and 5.0 maximum emitter to base voltage, dc

• Power Rating Per Characteristic

  400.0 milliwatts maximum total device dissipation

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Iii Precious Material And Location

  terminal surfaces gold

• Iii Precious Material

  gold

• Overall Length

  0.170 inches minimum and 0.210 inches maximum

• Overall Diameter

  0.209 inches minimum and 0.230 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-18

• Mounting Method

  terminal

• Features Provided

  gold plated leads and hermetically sealed case

• Current Rating Per Characteristic

  600.00 milliamperes maximum collector current, dc

• Special Features

  junction pattern arrangement: pnp

• Inclosure Material

  metal

• Terminal Length

  0.500 inches minimum

• Internal Configuration

  junction contact

• Terminal Type And Quantity

  3 uninsulated wire lead