2N1721
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1721
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Mounting Facility Quantity
1
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Internal Junction Configuration
npn
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Voltage Rating In Volts Per Characteristic
150.0 maximum breakdown voltage,collector-to-base,emitter open and 100.0 maximum breakdown voltage,collector-to-emitter,base open and 6.0 maximum breakdown voltage,emitter-to-base,collector open
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Current Rating Per Characteristic
750.00 milliamperes maximum collector current,dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Thread Series Designator
unf
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Inclosure Material
metal
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Overall Length
0.320 inches nominal
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Overall Diameter
0.437 inches nominal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.437 inches nominal
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Nominal Thread Size
0.190 inches
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Semiconductor Material
silicon
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Power Rating Per Characteristic
2.0 watts maximum collector power dissipation