3N187
Semiconductor Devices and Associated Hardware
TRANSISTOR
3N187
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Specification/Standard Data
80131-release6201 professional/industrial association specification
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Electrode Internally-Electrically Connected To Case
source
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
20.0 maximum drain to source voltage and 20.0 maximum drain to gate voltage and -6.0 maximum reverse gate to source voltage
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Terminal Length
0.500 inches minimum
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Current Rating Per Characteristic
1.00 milliamperes source cutoff current major and 1.00 milliamperes source cutoff current megahertz and 50.00 milliamperes source cutoff current maximum of standard range and 1.00 milliamperes zero-gate-voltage source current torr
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Internal Configuration
field effect-dual gate
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Power Rating Per Characteristic
330.0 milliwatts small-signal input power, common-collector absolute