SS20179-1-FR

Semiconductor Devices and Associated Hardware

TRANSISTOR

SS20179-1-FR

5961-00-448-5113

5961 - Semiconductor Devices and Associated Hardware

Bae Systems

TRANSISTOR

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Technical Characteristics

  • Specification/Standard Data

    80131-release6201 professional/industrial association specification

  • Electrode Internally-Electrically Connected To Case

    source

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    20.0 maximum drain to source voltage and 20.0 maximum drain to gate voltage and -6.0 maximum reverse gate to source voltage

  • Terminal Length

    0.500 inches minimum

  • Current Rating Per Characteristic

    1.00 milliamperes source cutoff current major and 1.00 milliamperes source cutoff current megahertz and 50.00 milliamperes source cutoff current maximum of standard range and 1.00 milliamperes zero-gate-voltage source current torr

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Internal Configuration

    field effect-dual gate

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-72

  • Power Rating Per Characteristic

    330.0 milliwatts small-signal input power, common-collector absolute

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