PT6702-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
PT6702-1
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
TRANSISTOR
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Power Rating Per Characteristic
25.0 watts small-signal input power, common-collector preset
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Overall Length
0.230 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
3.00 amperes source cutoff current maximum
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Overall Diameter
0.375 inches maximum
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Semiconductor Material
silicon
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Nominal Thread Size
0.164 inches
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Terminal Type And Quantity
4 ribbon
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Voltage Rating In Volts Per Characteristic
50.0 maximum collector to base voltage/static/emitter open and 70.0 maximum collector to emitter reverse voltage, with base short-circuited to emitter and 30.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage,
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~1
static, collector open