C137NX27
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
C137NX27
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Mounting Method
threaded stud
-
Mounting Facility Quantity
1
-
Thread Series Designator
unf
-
Overall Width Across Flats
0.562 inches maximum
-
Electrode Internally-Electrically Connected To Case
anode
-
Internal Configuration
junction contact
-
Power Rating Per Characteristic
2.0 watts small-signal input power, common-collector outside diameter
-
Maximum Operating Temp Per Measurement Point
120.0 deg celsius junction
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Special Features
junction pattern arrangement: pnpn
-
Overall Diameter
0.650 inches maximum
-
Terminal Type And Quantity
1 threaded stud and 2 tab, solder lug
-
Inclosure Material
metal
-
Voltage Rating In Volts Per Characteristic
800.0 maximum breakover voltage, dc
-
Nominal Thread Size
0.250 inches
-
Overall Length
0.505 inches maximum
-
Current Rating Per Characteristic
0.10 amperes forward current, total rms peak