2N1413
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1413
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Specification/Standard Data
80131-release2810 professional/industrial association specification
-
Power Rating Per Characteristic
200.0 milliwatts maximum collector power dissipation
-
Current Rating Per Characteristic
200.00 milliamperes maximum collector current, dc
-
Semiconductor Material
germanium
-
Internal Configuration
junction contact
-
Overall Length
0.260 inches maximum
-
Inclosure Material
metal
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Special Features
junction pattern arrangement: pnp
-
Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
-
Voltage Rating In Volts Per Characteristic
35.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, collector-to-emitter, base open and 10.0 maximum breakdown voltage, emitter-to-base, collector open
-
Features Provided
hermetically sealed case
-
Terminal Circle Diameter
0.200 inches nominal
-
Mounting Method
terminal
-
Electrode Internally-Electrically Connected To Case
base
-
Overall Diameter
0.370 inches maximum
-
Terminal Length
1.500 inches minimum