2N5630

Technical Characteristics

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case

• Mounting Facility Quantity

  2

• Overall Length

  1.550 inches maximum

• Semiconductor Material

  silicon

• Overall Width

  1.050 inches maximum

• Power Rating Per Characteristic

  200.0 watts small-signal input power, common-collector absolute

• Special Features

  junction pattern arrangement: npn

• Internal Configuration

  junction contact

• Electrode Internally-Electrically Connected To Case

  collector

• Current Rating Per Characteristic

  5.00 amperes source cutoff current minimum and 16.00 amperes source cutoff current maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Mounting Method

  unthreaded hole

• Voltage Rating In Volts Per Characteristic

  120.0 maximum breakdown voltage, collector-to-emitter, base open and 120.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum breakdown voltage, emitter-to-base, collector open

• Inclosure Material

  metal