W41294B6002A3

Semiconductor Devices and Associated Hardware

TRANSISTOR

W41294B6002A3

5961-00-457-7950

5961 - Semiconductor Devices and Associated Hardware

Eads Deutschland T/A Cassidian

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Technical Characteristics

  • Power Rating Per Characteristic

    12.0 watts small-signal input power, common-collector minimum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Overall Diameter

    0.406 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Overall Width Across Flats

    0.430 inches nominal

  • Overall Length

    0.266 inches nominal

  • Current Rating Per Characteristic

    1.50 amperes source cutoff current maximum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Type And Quantity

    3 pin

  • Inclosure Material

    metal

  • Voltage Rating In Volts Per Characteristic

    65.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown voltage, emitter-to-base, collector open

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

  • Nominal Thread Size

    0.190 inches

  • Thread Series Designator

    unf

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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Providing Quality People

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