128C927H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
128C927H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Test Data Document
97942-128c927 drawing
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Terminal Type And Quantity
3 uninsulated wire lead
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Current Rating Per Characteristic
30.00 milliamperes maximum collector current, dc
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Power Rating Per Characteristic
300.0 milliwatts maximum collector power dissipation
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Voltage Rating In Volts Per Characteristic
25.0 maximum drain to gate voltage and 25.0 maximum drain to source voltage and 30.0 maximum gate to source cutoff voltage
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Features Provided
hermetically sealed case
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Terminal Circle Diameter
0.100 inches nominal
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Mounting Method
terminal
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Channel Polarity And Control Type
n-channel insulated gate type
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Internal Configuration
field effect
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Overall Diameter
0.230 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Length
0.210 inches maximum
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Inclosure Material
metal