2N2574
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N2574
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
anode
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakover voltage, dc
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Features Provided
hermetically sealed case
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Terminal Type And Quantity
2 tab, solder lug and 1 case
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Current Rating Per Characteristic
260.00 amperes forward current, average absolute
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Overall Length
0.450 inches maximum
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Semiconductor Material
silicon
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Special Features
junction pattern arrangement: pnpn
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Mounting Facility Quantity
2
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius case
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Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector blank