Q2118
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
Q2118
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Current Rating Per Characteristic
60.00 milliamperes forward current, average maximum single light emitting diode and 3.00 amperes source cutoff current universal single light emitting diode
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Semiconductor Material
gallium arsenide single light emitting diode
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Overall Length
0.340 inches nominal
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Power Rating Per Characteristic
150.0 milliwatts small-signal input power, common-collector absolute single transistor
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Inclosure Material
plastic
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Mounting Method
terminal
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Overall Width
0.250 inches nominal
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Power Rating Per Characteristic
100.0 milliwatts small-signal input power, common-collector absolute single light emitting diode
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-emitter, base open single transistor and 7.0 maximum breakdown voltage, emitter to collector, base open single transistor
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Precious Material And Location
plated leads option silver
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius ambient air
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Test Data Document
30003-247as-c1848 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
3.0 maximum reverse voltage, dc single light emitting diode
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Component Name And Quantity
1 light emitting diode and 1 transistor
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Semiconductor Material
silicon single transistor
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Special Features
photoisolator; single transistor junction pattern arrangement: npn; single light emitting diode junction pattern arrangement: pn
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Terminal Type And Quantity
6 pin
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Overall Height
0.120 inches nominal