2N3497A
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3497A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Mounting Method
terminal
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
400.0 milliwatts maximum total power dissipation
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Current Rating Per Characteristic
100.00 milliamperes maximum collector current,dc and 10.00 microamperes maximum collector cutoff current,dc,emitter open
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Internal Junction Configuration
pnp
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Electrode Internally-Electrically Connected To Case
collector
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Overall Diameter
0.220 inches nominal
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Terminal Length
0.500 inches minimum
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Overall Length
0.188 inches nominal
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Inclosure Material
metal
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Terminal Type And Quantity
3 uninsulated wire lead
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Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage,collector-to-base,emitter open and 120.0 maximum breakdown voltage,collector-to-emitter,base open and 4.5 maximum breakdown voltage,emitter-to-base,collector open