200720-701

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICES,UNITIZED

200720-701

5961-00-469-8159

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

SEMICONDUCTOR DEVICES,UNITIZED

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Technical Characteristics

  • End Item Identification

    p-3 acft

  • Current Rating Per Characteristic

    600.00 milliamperes source cutoff current maximum all transistor

  • Inclosure Material

    metal

  • Voltage Rating In Volts Per Characteristic

    75.0 maximum collector to base voltage, dc all transistor and 40.0 maximum collector to emitter voltage/static/base open all transistor and 6.0 maximum emitter to base voltage, instantaneous all transistor

  • Terminal Type And Quantity

    6 uninsulated wire lead

  • Component Name And Quantity

    2 transistor

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Special Features

    all transistor junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case and burn in

  • Terminal Length

    1.500 inches minimum

  • Power Rating Per Characteristic

    600.0 milliwatts small-signal input power, common-collector absolute all transistor

  • Semiconductor Material

    silicon all transistor

  • Overall Length

    0.150 inches minimum and 0.180 inches maximum

  • Overall Diameter

    0.335 inches minimum and 0.370 inches maximum

  • Terminal Circle Diameter

    0.200 inches nominal

  • Mounting Method

    terminal

Certified to
AS6081 Methods

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