2N3609

Technical Characteristics

• Inclosure Material

  metal

• Overall Diameter

  0.370 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-77

• Component Name And Quantity

  2 transistor

• Mounting Method

  terminal

• Features Provided

  hermetically sealed case

• Voltage Rating In Volts Per Characteristic

  25.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source all transistor and 25.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

• Power Rating Per Characteristic

  350.0 milliwatts maximum total power dissipation all transistor

• Overall Length

  0.260 inches maximum

• Terminal Length

  0.500 inches minimum

• Internal Configuration

  field effect all transistor

• Channel Polarity And Control Type

  p-channel insulated gate type all transistor

• Terminal Circle Diameter

  0.200 inches nominal

• Semiconductor Material

  silicon all transistor

• Current Rating Per Characteristic

  7.00 milliamperes maximum drain current all transistor

• Terminal Type And Quantity

  8 uninsulated wire lead

• Specification/Standard Data

  80131-release5240 professional/industrial association specification