NP13196
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
NP13196
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open all transistor
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Power Rating Per Characteristic
400.0 milliwatts maximum total power dissipation all transistor
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Length
1.000 inches minimum and 1.500 inches maximum
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon all semiconductor
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Current Rating Per Characteristic
50.00 milliamperes maximum collector current, dc all transistor
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
6 uninsulated wire lead
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Inclosure Material
metal
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Overall Length
0.180 inches maximum
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Component Name And Quantity
2 transistor
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal