251MT083
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
251MT083
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Overall Length
1.810 inches maximum
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Overall Diameter
1.227 inches maximum
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Electrode Internally-Electrically Connected To Case
anode
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
15.0 watts maximum peak gate power dissipation
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Thread Series Designator
unf
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Reference Number Differentiating Characteristics
material will be in accordance with ships parts control center activity hx quality control,manufacturing and testing specifications
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Inclosure Material
metal
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Mounting Facility Quantity
1
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-83
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Internal Junction Configuration
pnpn
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Mounting Method
threaded stud
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Nominal Thread Size
0.500 inches
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Semiconductor Material
silicon
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud