2N3375
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3375
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Nominal Thread Size
0.190 inches
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Thread Series Designator
unf
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Internal Junction Configuration
npn
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage, collector-to-emitter, base open and 65.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
200.00 milliamperes source cutoff current minimum and 1.50 amperes source cutoff current maximum
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Overall Length
0.245 inches minimum and 0.300 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Overall Width Across Flats
0.440 inches maximum
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Terminal Type And Quantity
3 pin
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Inclosure Material
metal
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Power Rating Per Characteristic
11.6 watts small-signal input power, common-collector minimum