2N3583

Technical Characteristics

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Power Rating Per Characteristic

  200.0 milliwatts small-signal input power, common-collector preset

• Overall Diameter

  0.500 inches maximum

• Semiconductor Material

  silicon

• Terminal Type And Quantity

  2 pin and 1 case

• Mounting Facility Quantity

  2

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Voltage Rating In Volts Per Characteristic

  175.0 maximum breakdown voltage, collector-to-emitter, base open and 250.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Overall Length

  0.340 inches maximum

• Electrode Internally-Electrically Connected To Case

  collector

• Current Rating Per Characteristic

  1.00 amperes source cutoff current minimum and 1.00 amperes source cutoff current maximum and 10.00 milliamperes zero-gate-voltage source current preset