2N5671

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N5671

5961-00-481-4205

5961 - Semiconductor Devices and Associated Hardware

Trw Electronics And Defense Sector

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Technical Characteristics

  • Specification/Standard Data

    80131-release6164 professional/industrial association specification

  • Overall Diameter

    0.875 inches maximum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Overall Length

    0.450 inches maximum

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    10.00 amperes source cutoff current minimum and 30.00 amperes source cutoff current maximum

  • Mounting Facility Quantity

    2

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Voltage Rating In Volts Per Characteristic

    120.0 maximum breakdown voltage, collector-to-emitter, base open and 120.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum breakdown voltage, emitter-to-base, collector open

  • Inclosure Material

    metal

  • Electrode Internally-Electrically Connected To Case

    collector

  • Power Rating Per Characteristic

    80.0 watts small-signal input power, common-collector minimum

  • Internal Junction Configuration

    npn

Certified to
AS6081 Methods

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