2N3879SDT7A03

Technical Characteristics

• Voltage Rating In Volts Per Characteristic

  120.0 maximum collector to base voltage/static/emitter open and 75.0 maximum collector-to-emitter, substaining voltage, base open-circuited and 90.0 maximum collector-to-emitter substaining voltage, resistance between base and emitter and 7.0 maximum

• Overall Width

  0.700 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-66

• Electrode Internally-Electrically Connected To Case

  collector

• Power Rating Per Characteristic

  35.0 watts small-signal input power, common-collector preset

• Overall Height

  0.272 inches maximum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Terminal Type And Quantity

  2 pin and 1 case

• Mounting Facility Quantity

  2

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Current Rating Per Characteristic

  5.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Test Data Document

  00638-21459 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Overall Length

  1.252 inches maximum

• ~1

  emitter to base voltage, static, collector open