2N2761
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2761
5961 - Semiconductor Devices and Associated Hardware
Microsemi Corp. - Massachusetts
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector preset
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Voltage Rating In Volts Per Characteristic
250.0 maximum collector to base voltage/static/emitter open and 250.0 maximum collector to emitter voltage, dc with specified circuit between base and emitter and 250.0 maximum collector-to-emitter, substaining voltage, base open-circuited
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Thread Series Designator
unf
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Specification/Standard Data
80131-release4201 professional/industrial association specification
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Semiconductor Material
silicon
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Current Rating Per Characteristic
7.50 amperes source cutoff current minimum and 30.00 amperes source cutoff current maximum
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Nominal Thread Size
0.312 inches
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Overall Diameter
0.844 inches maximum
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Overall Length
1.803 inches maximum
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius case
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Inclosure Material
metal
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Overall Width Across Flats
0.844 inches minimum and 0.875 inches maximum