2N2812
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2812
5961 - Semiconductor Devices and Associated Hardware
General Semiconductor Industries Inc
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.250 inches
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Semiconductor Material
silicon
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Current Rating Per Characteristic
2.00 amperes maximum base current,dc and 10.00 amperes maximum collector current,dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Specification/Standard Data
80131-release4177 professional/industrial association specification
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Overall Length
0.400 inches nominal
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Mounting Facility Quantity
1
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Internal Junction Configuration
npn
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Overall Width Across Flats
0.687 inches nominal
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage,collector-to-base,emitter open and 60.0 maximum breakdown voltage,collector-to-emitter,base open and 8.0 maximum breakdown voltage,emitter-to-base,collector open
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Power Rating Per Characteristic
70.0 watts maximum collector power dissipation
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Thread Series Designator
unf
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Terminal Type And Quantity
3 tab,solder lug