2N1666
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1666
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
40.0 maximum emitter to base voltage, static, collector open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Current Rating Per Characteristic
6.00 amperes source cutoff current maximum and 1.00 amperes source cutoff current minimum
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Special Features
junction pattern arrangement: pnp
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Width
1.050 inches maximum
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Overall Length
1.560 inches maximum
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Transfer Ratio
30.0 maximum static forward current transfer ratio, common-emitter
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Mounting Method
unthreaded hole
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Semiconductor Material
germanium
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Inclosure Material
metal
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Power Rating Per Characteristic
30.0 watts small-signal input power, common-collector minimum
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Overall Height
0.410 inches maximum