2N3459
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3459
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Electrode Internally-Electrically Connected To Case
collector
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Method
terminal
-
Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source
-
Overall Diameter
0.230 inches maximum
-
Channel Polarity And Control Type (Non-Core)
n-channel junction type
-
Features Provided
hermetically sealed case
-
Overall Length
0.210 inches maximum
-
Semiconductor Material
silicon
-
Power Rating Per Characteristic
300.0 milliwatts small-signal input power, common-collector absolute
-
Terminal Length
0.500 inches minimum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Internal Configuration
field effect
-
Inclosure Material
metal
-
Current Rating Per Characteristic
4.00 milliamperes zero-gate-voltage source current megawatts
-
Terminal Circle Diameter
0.100 inches nominal