Q62702-U137

Semiconductor Devices and Associated Hardware

TRANSISTOR

Q62702-U137

5961-00-491-0655

5961 - Semiconductor Devices and Associated Hardware

Epcos Ag Abt. Pr Roe K Pm

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Overall Width

    0.270 inches nominal

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Current Rating Per Characteristic

    1.00 amperes source cutoff current minimum and 4.00 amperes source cutoff current maximum

  • Specification/Standard Data

    80131-release5751 professional/industrial association specification

  • Mounting Method

    unthreaded hole

  • Overall Height

    0.070 inches nominal

  • Terminal Type And Quantity

    3 pin

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Facility Quantity

    1

  • Power Rating Per Characteristic

    40.0 watts small-signal input power, common-collector minimum

  • Inclosure Material

    metal

  • Overall Length

    0.390 inches nominal

Certified to
AS6081 Methods

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