C35NX30

Technical Characteristics

• Inclosure Material

  metal

• Mounting Facility Quantity

  1

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-48

• Internal Junction Configuration

  pnpn

• Mounting Method

  threaded stud

• Overall Width Across Flats

  0.562 inches maximum

• Nominal Thread Size

  0.250 inches

• Current Rating Per Characteristic

  35.00 amperes maximum forward current,total rms

• Thread Series Designator

  unf

• Overall Length

  1.646 inches maximum

• Internal Configuration

  junction contact

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  800.0 maximum repetitive peak reverse voltage,maximum peak total value,gate terminal open-circuited

• Power Rating Per Characteristic

  5.0 watts maximum peak gate power dissipation

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius junction

• Terminal Type And Quantity

  3 tab,solder lug and 1 threaded stud