3NN125

Technical Characteristics

• Special Features

  junction pattern arrangement: pn

• Mounting Method

  terminal

• Power Rating Per Characteristic

  300.0 milliwatts small-signal input power, common-collector minimum

• Specification/Standard Data

  80131-release5181 professional/industrial association specification

• Overall Diameter

  0.219 inches nominal

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Channel Polarity And Control Type (Non-Core)

  p-channel insulated gate type

• Current Rating Per Characteristic

  20.00 milliamperes source cutoff current maximum of standard range and 20.00 milliamperes source cutoff current minor

• Terminal Length

  0.500 inches minimum

• Overall Length

  0.188 inches nominal

• Internal Configuration

  field effect

• Inclosure Material

  metal

• Terminal Type And Quantity

  4 uninsulated wire lead

• Voltage Rating In Volts Per Characteristic

  50.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 15.0 maximum drain to source voltage and 50.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

• Terminal Circle Diameter

  0.100 inches nominal