2N4185
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N4185
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Terminal Length
1.320 inches minimum
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Electrode Internally-Electrically Connected To Case
anode
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakover voltage, dc
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Power Rating Per Characteristic
500.0 milliwatts maximum peak gate power dissipation
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.185 inches maximum
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Overall Diameter
0.420 inches maximum
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Current Rating Per Characteristic
5.00 amperes maximum collector current, dc
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Specification/Standard Data
80131-release5221 professional/industrial association specification