JAN2N1132B
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N1132B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
metal
-
Internal Configuration
junction contact
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
-
Internal Junction Configuration
pnp
-
Terminal Circle Diameter
0.200 inches nominal
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Current Rating Per Characteristic
600.00 milliamperes maximum collector current,dc
-
Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Reference Number Differentiating Characteristics
material willbe in accordance with ships parts control center activity hx quality control,manufacturing and testing specifications
-
Overall Length
0.250 inches nominal
-
Terminal Length
1.500 inches minimum
-
Overall Diameter
0.359 inches nominal
-
Electrode Internally-Electrically Connected To Case
collector
-
Mounting Method
terminal
-
Power Rating Per Characteristic
2.0 watts maximum total power dissipation