Q67000H112Z9

Technical Characteristics

• Design Function And Quantity

  1 gate, nand

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Precious Material

  silver

• Terminal Type And Quantity

  14 printed circuit

• Terminal Surface Treatment

  silver

• Input Circuit Pattern

  8 input

• Features Provided

  monolithic and positive outputs and w/totem pole output

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• Time Rating Per Chacteristic

  22.00 nanoseconds maximum propagation delay time, low to high level output and 15.00 nanoseconds maximum propagation delay time, high to low level output

• Precious Material And Location

  terminals silver

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Maximum Power Dissipation Rating

  40.0 milliwatts

• Body Length

  0.660 inches minimum and 0.785 inches maximum

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Case Outline Source And Designator

  t0-116 joint electron device engineering council

• Inclosure Material

  plastic

• Output Logic Form

  transistor-transistor logic