STR1133
Semiconductor Devices and Associated Hardware
TRANSISTOR
STR1133
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Power Rating Per Characteristic
75.0 watts maximum collector power dissipation
-
Inclosure Material
metal
-
Overall Diameter
0.875 inches maximum
-
Mounting Facility Quantity
2
-
Electrode Internally-Electrically Connected To Case
collector
-
Internal Junction Configuration
pnp
-
Mounting Method
unthreaded hole
-
Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage,collector-to-base,emitter open and 80.0 maximum breakdown voltage,collector-to-emitter,base open and 10.0 maximum breakdown voltage,emitter-to-base,collector open
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Terminal Type And Quantity
2 uninsulated wire lead and 1 case
-
Overall Length
0.450 inches maximum
-
Internal Configuration
junction contact
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Current Rating Per Characteristic
2.00 amperes maximum base current,dc and 5.00 amperes maximum collector current,dc