580R132H02
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
580R132H02
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unf
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Voltage Rating In Volts Per Characteristic
2.6 maximum forward voltage, peak and 3.5 maximum gate trigger voltage, dc
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
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Current Rating Per Characteristic
25.00 amperes forward current, average maximum of standard range and 80.00 milliamperes forward current, total rms preset and 80.00 milliamperes forward current, total rms peak
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector absolute
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Special Features
internal junction configuration arrangement pnpn
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Overall Width Across Flats
0.550 inches minimum and 0.562 inches maximum
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Inclosure Material
metal
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Nominal Thread Size
0.250 inches
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Maximum Operating Temp Per Measurement Point
110.0 deg celsius junction
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Overall Length
0.450 inches minimum and 0.650 inches maximum