JAN2N3070

Semiconductor Devices and Associated Hardware

TRANSISTOR

JAN2N3070

5961-00-496-9311

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Overall Diameter

    0.230 inches maximum

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum drain to source voltage and 50.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Specification/Standard Data

    80131-release4584 professional/industrial association specification

  • Electrode Internally-Electrically Connected To Case

    gate

  • Channel Polarity And Control Type (Non-Core)

    n-channel junction type

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    350.0 milliwatts small-signal input power, common-collector minimum

  • Overall Length

    0.210 inches maximum

  • Semiconductor Material

    silicon

  • Terminal Length

    1.500 inches minimum

  • Current Rating Per Characteristic

    100.00 milliamperes source cutoff current minor

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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