352-0756-120

Semiconductor Devices and Associated Hardware

TRANSISTOR

352-0756-120

5961-00-501-1006

5961 - Semiconductor Devices and Associated Hardware

Rockwell Collins Inc.

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    3.5 maximum gate to source cutoff voltage and 35.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Features Provided

    hermetically sealed case

  • Inclosure Material

    ceramic and glass

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Internal Configuration

    field effect

  • Overall Length

    0.080 inches maximum

  • Terminal Length

    0.157 inches minimum

  • Power Rating Per Characteristic

    175.0 milliwatts small-signal input power, common-collector absolute

  • Test Data Document

    13499-352-0756 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Current Rating Per Characteristic

    15.00 milliamperes zero-gate-voltage source current megawatts

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Overall Diameter

    0.210 inches maximum

  • Channel Polarity And Control Type (Non-Core)

    n-channel junction type

Certified to
AS6081 Methods

Implementing Quality Procurement

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