2N1910
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N1910
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Special Features
junction pattern arrangement: npnp
-
Power Rating Per Characteristic
0.5 watts small-signal input power, common-collector blank
-
Overall Diameter
1.031 inches maximum
-
Inclosure Material
metal
-
Overall Width Across Flats
1.063 inches maximum
-
Terminal Type And Quantity
1 threaded stud and 3 tab, solder lug
-
Semiconductor Material
silicon
-
Features Provided
hermetically sealed case
-
Voltage Rating In Volts Per Characteristic
50.0 maximum breakover voltage, dc
-
Overall Length
2.500 inches maximum
-
Specification/Standard Data
80131-release3245 professional/industrial association specification
-
Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
-
Internal Configuration
junction contact
-
Mounting Facility Quantity
1
-
Mounting Method
threaded stud
-
Current Rating Per Characteristic
70.00 amperes source cutoff current maximum
-
Thread Series Designator
unf
-
Nominal Thread Size
0.500 inches