40ED103

Technical Characteristics

• Semiconductor Material

  silicon

• Overall Width Across Flats

  0.440 inches nominal

• Current Rating Per Characteristic

  1.00 amperes source cutoff current maximum

• Inclosure Material

  metal

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction

• Power Rating Per Characteristic

  15.0 watts small-signal input power, common-collector absolute

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Terminal Type And Quantity

  3 uninsulated wire lead

• Nominal Thread Size

  0.190 inches

• Thread Series Designator

  unf

• Precious Material And Location

  terminal surface gold

• Voltage Rating In Volts Per Characteristic

  550.0 maximum collector to base voltage, dc and 510.0 maximum collector to emitter voltage, dc and 7.0 maximum emitter to base voltage, dc

• Precious Material

  gold

• Overall Length

  0.295 inches maximum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case