12BB124

Technical Characteristics

• ~1

  open all transistor

• Component Function Relationship

  matched

• Precious Material And Location

  terminal surface gold

• Precious Material

  gold

• Inclosure Material

  metal all semiconductor device diode

• Semiconductor Material

  silicon all transistor

• Internal Junction Configuration

  npn all transistor

• Terminal Type And Quantity

  3 tab, solder lug all transistor

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum all transistor

• Internal Configuration

  junction contact all transistor

• Mounting Facility Quantity

  1 all transistor

• Nominal Thread Size

  0.250 inches all transistor

• Overall Width Across Flats

  0.667 inches minimum all transistor and 0.687 inches maximum all transistor

• Component Name And Quantity

  4 transistor

• Overall Length

  1.330 inches maximum all transistor

• Mounting Method

  threaded stud all transistor

• Voltage Rating In Volts Per Characteristic

  300.0 minimum breakdown voltage, collector-to-emitter, with base short-circuited to emitter all transistor and 250.0 minimum breakdown voltage, collector-to-emitter, base open all transistor and 7.0 minimum breakdown voltage, emitter to collector, base

• Power Rating Per Characteristic

  75.0 watts small-signal input power, common-collector preset all transistor