MM4203Q

Technical Characteristics

• Features Provided

  w/storage and bipolar and programmable and negative outputs and hermetically sealed and monolithic and w/buffered output and w/decoded output and high speed

• Voltage Rating And Type Per Characteristic

  -20.0 volts minimum power source and 0.3 volts maximum power source

• Case Outline Source And Designator

  -0-015-aa joint electron device engineering council

• Inclosure Material

  glass and metal

• Storage Temp Range

  -65.0/+125.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Time Rating Per Chacteristic

  500.00 nanoseconds maximum propagation delay time, low to high level output and 500.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  rom

• Body Height

  0.120 inches minimum and 0.250 inches maximum

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Body Length

  1.200 inches minimum and 1.290 inches maximum

• Output Logic Form

  p-type metal oxide-semiconductor logic

• Input Circuit Pattern

  12 input

• Inclosure Configuration

  dual-in-line

• Body Width

  0.515 inches minimum and 0.580 inches maximum

• Terminal Type And Quantity

  24 printed circuit

• Operating Temp Range

  -55.0/+85.0 deg celsius