FBN-L-199
Semiconductor Devices and Associated Hardware
TRANSISTOR
FBN-L-199
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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End Item Identification
aircraft, stratofortress b-52; bullseye; radar iff system an/tpx-42a(v); los angeles class ssn (688); an/usm-410, electronic quality assurance test equip (equate); emory s. land class as; austin ship class lpd-4 amphibious transport docks; nimitz class
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~1
cvn; tarawa class lha; aircraft, f-16
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Terminal Length
0.500 inches minimum
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Current Rating Per Characteristic
600.00 milliamperes source cutoff current maximum
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Inclosure Material
metal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Circle Diameter
0.100 inches nominal
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Special Features
weapon system essential; junction pattern arrangement: pnp
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Criticality Code Justification
feat
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Power Rating Per Characteristic
400.0 milliwatts small-signal input power, common-collector minimum
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Internal Configuration
junction contact