2N5794PS337
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
2N5794PS337
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.370 inches maximum
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Component Name And Quantity
2 transistor
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Terminal Type And Quantity
6 uninsulated wire lead
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Overall Length
0.185 inches maximum
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Internal Configuration
junction contact all transistor
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Internal Junction Configuration
npn all transistor
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Mounting Method
terminal
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Semiconductor Material
silicon all transistor
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Voltage Rating In Volts Per Characteristic
75.0 maximum collector to base voltage, dc all transistor and 40.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, dc
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Current Rating Per Characteristic
0.60 amperes maximum collector current, dc all transistor
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Power Rating Per Characteristic
2.0 watts maximum total device dissipation all transistor
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Test Data Document
81413-231266 drawing