928171-501B

Semiconductor Devices and Associated Hardware

TRANSISTOR

928171-501B

5961-00-544-5586

5961 - Semiconductor Devices and Associated Hardware

Raytheon Company

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.460 inches maximum

  • Function For Which Designed

    amplifier

  • Mounting Facility Quantity

    1

  • Internal Configuration

    junction contact

  • Internal Junction Configuration

    pnp

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    m100.0 maximum collector to base voltage/static/emitter open and m80.0 maximum collector to emitter voltage/static/base open and m5.5 maximum emitter to base voltage,static,collector open

  • Unpackaged Unit Weight

    15.0 grams

  • Terminal Type And Quantity

    3 tab,solder lug

  • Mounting Method

    threaded stud

  • Features Provided

    hermetically sealed case

  • Overall Width Across Flats

    0.687 inches maximum

  • Nominal Thread Size

    0.250 inches

  • Current Rating Per Characteristic

    m10.00 amperes maximum collector current,dc

  • Power Rating Per Characteristic

    67.0 watts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius ambient air

  • Test Data Document

    82577-928171 drawing

  • Thread Series Designator

    unf

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