63B301650P2

Technical Characteristics

• Word Quantity (Non-Core)

  256

• Output Logic Form

  diode-transistor logic and transistor-transistor logic

• Body Width

  0.260 inches minimum and 0.293 inches maximum

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Time Rating Per Chacteristic

  55.00 nanoseconds maximum propagation delay time, low to high level output and 55.00 nanoseconds maximum propagation delay time, high to low level output

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Height

  0.180 inches nominal

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Maximum Power Dissipation Rating

  350.0 milliwatts

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Features Provided

  hermetically sealed and programmable and w/enable

• Inclosure Configuration

  dual-in-line

• Bit Quantity (Non-Core)

  1024

• Body Length

  0.735 inches minimum and 0.830 inches maximum