2N5433PS337
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5433PS337
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-52
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
-25.0 maximum gate to source voltage
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Mfr Source Controlling Reference
231276-701
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.115 inches minimum and 0.150 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Internal Configuration
field effect
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(Non-Core Data) Channel Polarity And Control Type
n-channel junction type
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Mounting Method
terminal
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Current Rating Per Characteristic
400.00 milliamperes maximum drain current and 100.00 milliamperes maximum gate current
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Power Rating Per Characteristic
300.0 milliwatts maximum total power dissipation
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Manufacturers Code
81413
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Test Data Document
81413-231276 drawing