JAN2N916

Semiconductor Devices and Associated Hardware

TRANSISTOR

JAN2N916

5961-00-576-4978

5961 - Semiconductor Devices and Associated Hardware

Raytheon Company

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.210 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.230 inches maximum

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Method

    terminal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    50.00 milliamperes maximum collector current, dc and 1.00 milliamperes maximum emitter current, dc

  • Power Rating Per Characteristic

    360.0 milliwatts maximum collector power dissipation

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Terminal Circle Diameter

    0.100 inches nominal

  • Criticality Code Justification

    feat

  • Voltage Rating In Volts Per Characteristic

    45.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Special Features

    item must comply with rqmt of desc production std no. l01659; junction pattern arrangement: npn

Certified to
AS6081 Methods

Implementing Quality Procurement

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